High density LED arrays with semiconductor interconnects

LED-Matrix hoher Dichte mit Halbleiterverdrahtung

Matrice de LED à haute densité avec interconnexions semi-conductrices

Abstract

A high density LED array with semiconductor interconnects includes a plurality of layers of material stacked on a substrate (15, 15') including a conductive layer (16, 16'), a first carrier confinement layer (17, 17'), an active layer (18, 18'), and a second carrier confinement layer (19, 19'). The layers are separated (26, 27, 25', 30') into isolated LEDs in a matrix of rows and columns with the conductive layer connecting a first electrode of each LED in a column to a first electrode of each other LED in the column. Row conductors (35, 35') connect a second electrode of each LED in a row to a second electrode of each other LED in the row and column conductors (34) are connected to the conductive layer of each column.

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Patent Citations (6)

    Publication numberPublication dateAssigneeTitle
    EP-0011418-A1May 28, 1980THE GENERAL ELECTRIC COMPANY, p.l.c.Verfahren zur Herstellung von Leuchtanzeigevorrichtungen
    EP-0423772-A2April 24, 1991Kabushiki Kaisha ToshibaComposant émetteur de lumière à semi-conducteur
    JP-H04212479-AAugust 04, 1992Toshiba CorpSemiconductor light-emitting device
    US-4275403-AJune 23, 1981U.S. Philips CorporationElectro-luminescent semiconductor device
    US-4775645-AOctober 04, 1988Victor Company Of Japan, LimitedMethod of producing a flat LED panel display
    US-4956683-ASeptember 11, 1990Polaroid CorporationIsolation of p-n junctions

NO-Patent Citations (1)

    Title
    PATENT ABSTRACTS OF JAPAN vol. 16, no. 558 (E - 1294) 27 November 1992 (1992-11-27)

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    DE-19828970-C2May 18, 2000Siemens AgVerfahren zur Herstellung und Vereinzelung von Halbleiter-Lichtemissionsdioden
    US-6191438-B1February 20, 2001Sharp Kabushiki KaishaLight emitting diode array
    US-6475819-B2November 05, 2002Osram Opto Semiconductors Gmbh & Co. OhgMethod for formation and production of matrices of high density light emitting diodes
    US-9781800-B2October 03, 2017Infineon Technologies AgDriving several light sources